Description:
The K4J52324QE is 536,870,912 bits of hyper synchronous data rate Dynamic RAM organized as 8 x 2,097,152 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 8GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, and programmable latencies allow the device to be useful for a variety of high performance memory system applications.
Features:
- 1.9V +- 0.1V power supply for device operation for -BJ**
- 1.9V +- 0.1V power supply for I/O interface for -BJ**
- 1.8V +- 0.1V power supply for device operation for -BC**
- 1.8V +- 0.1V power supply for I/O interface for -BC**
- On-Die Termination (ODT)
- Output Driver Strength adjustment by EMRS
- Calibrated output drive
- 1.8V Pseudo Open drain compatible inputs/outputs
- 8 internal banks for concurrent operation
- Differential clock inputs (CK and CK)
- Commands entered on each positive CK edge
- CAS latency : 7, 8, 9, 10, 11, 12,13 (clock)
- Programmable Burst length : 4 and 8
- Programmable Write latency : 1, 2, 3, 4, 5, 6 and 7 (clock)
- Single ended READ strobe (RDQS) per byte
- Single ended WRITE strobe (WDQS) per byte
- RDQS edge-aligned with data for READs
- WDQS center-aligned with data for WRITEs
- Data Mask(DM) for masking WRITE data
- Auto & Self refresh modes
- Auto Precharge option
- 32ms, auto refresh (8K cycle)
- 136 Ball FBGA
- Maximum clock frequency up to 1000MHz
- Maximum data rate up to 2.0Gbps/pin
- DLL for outputs
- Boundary scan function with SEN pin
- Mirror function with MF pin
Package included:
- 1 x SAMSUNG K4J52324QE-BC14
